Title :
Oxidised GaAs QW vertical-cavity lasers with 40% power conversion efficiency
Author :
Weigl, B. ; Reiner, G. ; Grabherr, M. ; Ebeling, K.J.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
9/12/1996 12:00:00 AM
Abstract :
Using a solid source MBE and Be for p-type doping, the authors have fabricated 6 μm diameter multimode vertical-cavity lasers with GaAs quantum wells showing a 730 μA threshold current and a 8.5 mW output power. For the first time a maximum conversion efficiency >40% is reported for GaAs based VCSELs. Singlemode devices exhibit a maximum output power of 1.2 mW and a sidemode suppression >30 dB
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; optical fabrication; oxidation; quantum well lasers; surface emitting lasers; 1.2 mW; 40 percent; 6 micron; 730 muA; 8.5 mW; Be p-type doping; GaAs quantum wells; GaAs:Be; VCSEL; multimode lasers; oxidised GaAs QW lasers; power conversion efficiency; semiconductor lasers; singlemode devices; solid source MBE; vertical-cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961216
