DocumentCode :
133293
Title :
A numerical investigation of continuous wave parametric gain in silicon nano-waveguides at wavelengths around 1550 nm
Author :
Dziallas, Giannino ; Jazajerifar, Mahmoud ; Gajda, Andrzej ; Zimmermann, L. ; Petermann, K.
Author_Institution :
Inst. fur Hochfrequenz- und Halbleiter-Systemtechnologien, Tech. Univ. Berlin, Berlin, Germany
fYear :
2014
fDate :
1-4 Sept. 2014
Firstpage :
115
Lastpage :
116
Abstract :
We developed a numerical model to investigate continuous wave four wave mixing (FWM) in silicon nano-waveguides with embedded PIN junctions. The model is complemented by fitting to the experimental data. Using the model we show that the FWM gain in silicon can compensate for all relevant loss mechanisms (two photon and free carrier absorption as well as linear loss) provided that the carrier lifetime is low enough (few tens of picoseconds).
Keywords :
carrier lifetime; elemental semiconductors; multiwave mixing; nanophotonics; numerical analysis; optical waveguides; silicon; FWM; PIN junctions; carrier lifetime; continuous wave parametric gain; four wave mixing; free carrier absorption; linear loss; numerical model; silicon nano-waveguides; Absorption; Junctions; Numerical models; Optical waveguides; Optimized production technology; Propagation losses; Silicon; four-wave-mixing; parametric amplification; pin-junction; silicon waveguide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
ISSN :
2158-3234
Print_ISBN :
978-1-4799-3681-6
Type :
conf
DOI :
10.1109/NUSOD.2014.6935383
Filename :
6935383
Link To Document :
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