Title :
1.3 W 1.9 GHz and 1 W 2.4 GHz power amplifier MMIC in silicon
Author :
Simburger, W. ; Trost, H.P. ; Wohlmuth, H.D. ; Knapp, H. ; Weger, P.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
fDate :
9/12/1996 12:00:00 AM
Abstract :
A completely integrated 1.3 W power amplifier in silicon for 1.9 and 2.4 GHz wireless and mobile communications is presented for the first time. The chip is implemented in a 25 GHz fT, 0.8 μm, three layer interconnect silicon bipolar production technology (Siemens B6HF). The MMIC is designed for 3.4 to 5 V battery operation at 1.9 GHz, and delivers 0.4 W (26 dBm) to 1.3 W (31.1 dBm) of output power with up to 33% power-added efficiency. The amplifier is also suitable for the 2.4 GHz band with slight performance loss
Keywords :
MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; elemental semiconductors; mobile radio; silicon; 0.4 to 1.3 W; 0.8 micron; 1.9 GHz; 2.4 GHz; 25 GHz; 3.4 to 5 V; 33 percent; Si; Siemens B6HF; UHF IC; battery operation; bipolar production technology; mobile communications; power amplifier MMIC; three layer interconnect; wireless communications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961193
