Title :
Polarisation insensitive, 25 dB gain semiconductor laser amplifier without antireflection coatings
Author :
Kelly, A.E. ; Lealman, I.F. ; Rivers, L.J. ; Perrin, S.D. ; Silver, M.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
9/12/1996 12:00:00 AM
Abstract :
An angled facet strained MQW semiconductor laser amplifier with integrated mode expanders has been designed and fabricated. A device without antireflection coatings had <0.5 dB gain ripple and 0.5 dB polarisation sensitivity at 25 dB gain
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser modes; light polarisation; quantum well lasers; 25 dB; InGaAs; angled facet; gain ripple; integrated mode expanders; optical networks; polarisation sensitivity; semiconductor laser amplifier; strained MQW;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961220
