DocumentCode :
1333111
Title :
A 0.25 
m InP DHBT 200 GHz+ Static Frequency Divider
Author :
Amore, Matt D. ; Monier, Cedric ; Lin, Steven Taiyu ; Oyama, Bert ; Scott, Dennis W. ; Kaneshiro, Eric N. ; Chang, Ping-Chih ; Sato, Kenneth F. ; Niemi, Alex ; Dang, Linh ; Cavus, Abdullah ; Gutierrez-Aitken, Augusto ; Oki, Aaron K.
Author_Institution :
Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA
Volume :
45
Issue :
10
fYear :
2010
Firstpage :
1992
Lastpage :
2002
Abstract :
Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 μm 530 GHz fT /600 GHz+ fmax InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GHz. The divide-by-two core flip-flop dissipates 228 mW. Techniques used for the divider design optimization and for selecting variants to maximize performance across process changes are also discussed.
Keywords :
III-V semiconductors; frequency dividers; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; DHBT process; InP; divide-by-two core flip-flop; divider design optimization; frequency 530 GHz; power 228 mW; size 0.25 mum; static frequency divider circuit; DH-HEMTs; Frequency conversion; Indium phosphide; Inductance; Load modeling; Performance evaluation; Resistance; Digital; HBT; InP; divider; frequency; high speed; static;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2058171
Filename :
5584965
Link To Document :
