Implementation of the temperature and narrow channel dependence on threshold voltage model of NMOSFETs

In this paper, a new simplify mismatch of temperature and narrow channel dependence of threshold voltage of NMOS developed from spice level 3 and BSIM3 are proposed. The I_DS -V_GS in linear region was used with a different channel width. The parameters extraction procedure is based on the measurement of the transconductance characteristics of MOSFET in linear region. In this model, the temperature coefficient for threshold voltage and the body-bias coefficient of threshold voltage of a big MOSFET and a narrow channel width of MOSFET are determined. The results show that, the deviation of threshold voltage from the predicted model compared with the experimental data is less than 5%.