DocumentCode :
133329
Title :
On modifications of the Scharfetter-Gummel scheme for drift-diffusion equations with Fermi-like statistical distribution functions
Author :
Koprucki, Thomas ; Kantner, Markus ; Fuhrmann, Jurgen ; Gartner, Klaus
Author_Institution :
Weierstrass Inst. for Appl. Anal. & Stochastics, Berlin, Germany
fYear :
2014
fDate :
1-4 Sept. 2014
Firstpage :
155
Lastpage :
156
Abstract :
Driven by applications in fields like organic semiconductors there is an increased interest in numerical simulations based on drift-diffusion models with general statistical distribution functions. It is important to keep the well known qualitative properties of the Scharfetter-Gummel finite volume scheme, like positivity of solutions, dissipativity and consistency with thermodynamic equilibrium. A proper generalization to general statistical distribution functions is a topic of current research. The paper presents different state-of-the-art approaches to solve this problem. Their issues and advantages are discussed, and their practical performance is evaluated for real device structures.
Keywords :
carrier density; diffusion; finite volume methods; organic semiconductors; statistical distributions; Fermi-like statistical distribution functions; Scharfetter-Gummel scheme; drift-diffusion equations; finite volume scheme; organic semiconductors; thermodynamic equilibrium; Approximation methods; Charge carrier processes; Electric potential; Equations; Mathematical model; Statistical distributions; Thermodynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
ISSN :
2158-3234
Print_ISBN :
978-1-4799-3681-6
Type :
conf
DOI :
10.1109/NUSOD.2014.6935403
Filename :
6935403
Link To Document :
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