Photocurrent enhancement in GaPNAs-based solar cells with Si nanowire array substrate

Author

Kudryashov, D.A. ; Gudovskikh, A.S.

Author_Institution

Nanotechnol. Res. & Educ. Centre, St.-Petersburg Acad. Univ., St. Petersburg, Russia

fYear

2014

fDate

1-4 Sept. 2014

Firstpage

171

Lastpage

172

Abstract

A numerical simulation of GaPNAs-based solar cells deposited on silicon nanowire (NW) array was done. It is shown that single-junction solar cell consisting of GaPNAs-based p-i-n junction with a band gap of 1.78 eV and minority charge carrier lifetime in i-layer of 0.1 ns on Si-based NW template can reach short-circuit current values of 16.5 mA/cm² and efficiency of 11.8% under AM1.5D 100 mW/cm². The influence of the i-layer thickness, minority carrier lifetime and NW length on solar cell´s characteristics was shown.

Keywords

elemental semiconductors; nanowires; numerical analysis; photoconductivity; photoemission; silicon; solar cells; Si; band gap; electron volt energy 1.78 eV; minority carrier lifetime; minority charge carrier; nanowire; numerical simulation; p-i-n junction; photocurrent enhancement; short-circuit current; solar cells; time 0.1 ns; Arrays; Charge carrier lifetime; PIN photodiodes; Photovoltaic cells; Short-circuit currents; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on

Conference_Location

Palma de Mallorca

ISSN

2158-3234

Print_ISBN

978-1-4799-3681-6

Type

conf

DOI

10.1109/NUSOD.2014.6935411

Filename

6935411