DC-110-GHz MMIC traveling-wave switch

Author

Mizutani, Hiroshi ; Takayama, Yoichiro

Author_Institution

C&C LSI Dev. Div., NEC Corp., Kawasaki, Japan

Volume

48

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

840

Lastpage

845

Abstract

This paper presents the broadest band monolithic-microwave integrated-circuit traveling-wave switch ever reported for millimeter-wave applications. The developed switch with the novel structure of a 400-μm-gate finger field-effect transistor (FET) indicated an insertion loss of less than 2.55 dB and an isolation of better than 22.2 dB from dc to 110 GHz. Also, the switch indicated no degradation of insertion loss and an ON/OFF ratio of more than 22.7 dB up to an input power of 26.5 dBm at 40 GHz. Circuit analytical results based on a lossy transmission-line model for small-signal performance and circuit simulation results using the two-terminal nonlinear FET model for large-signal operation successfully showed good agreement with the experimental results

Keywords

equivalent circuits; field effect MIMIC; integrated circuit design; integrated circuit modelling; microwave switches; transmission line theory; 0 to 110 GHz; 2.55 dB; EHF; MIMIC traveling-wave switch; MM-wave IC; MM-wave switch; MMIC traveling-wave switch; broadband switch; circuit simulation; field-effect transistor; insertion loss; large-signal operation; lossy transmission-line model; millimeter-wave applications; small-signal performance; two-terminal nonlinear FET model; wideband switch; Circuit analysis; Degradation; FETs; Field effect MMICs; Fingers; Insertion loss; Millimeter wave transistors; Performance analysis; Propagation losses; Switches;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.841881

Filename

841881