Title :
PDL optimization in waveguide MQW pin photodiodes
Author :
Gan Zhou ; Runge, Patrick
Author_Institution :
Fraunhofer Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
In this paper, a simulation model is presented for optimizing the polarization dependent loss (PDL) of waveguide multiple-quantum well (MQW) pin photodiodes (PD). The model accounts for strain, carrier transit time through the MQW layers and free carrier density in the quantum wells.
Keywords :
carrier density; integrated optics; light polarisation; nanophotonics; optical design techniques; optical losses; optical waveguides; optimisation; p-i-n photodiodes; quantum wells; PDL optimization; carrier transit time; free carrier density; multiple-quantum well; polarization dependent loss; strain; waveguide MQW pin photodiodes; Absorption; Charge carrier density; Optical polarization; Optical waveguides; PIN photodiodes; Quantum well devices; Strain; exciton; multiple-quantum well; pin photodiode; polarization dependent loss; simulation model;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-3681-6
DOI :
10.1109/NUSOD.2014.6935416
