DocumentCode
1333697
Title
Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
Author
De Andrade, Maria Glória Caño ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Author_Institution
IMEC, Leuven, Belgium
Volume
32
Issue
11
fYear
2011
Firstpage
1597
Lastpage
1599
Abstract
The low-frequency (LF) noise in standard n-channel triple-gate bulk FinFETs with and without dynamic threshold operation is, for the first time, experimentally investigated in the linear and saturation regions. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. The LF noise characteristics indicate that the DTMOS FinFET devices can be a promising candidate for analog and RF applications.
Keywords
MOSFET; circuit noise; DTMOS FinFET device; bulk triple-gate FinFET; dynamic threshold operation; linear region; low-frequency noise; n-channel FinFET; saturation region; FinFETs; Logic gates; Low-frequency noise; Performance evaluation; Silicon; Silicon on insulator technology; Bulk; DTMOS; low-frequency (LF) noise; triple gate;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2166372
Filename
6029280
Link To Document