Title :
Comparison of the Low-Frequency Noise of Bulk Triple-Gate FinFETs With and Without Dynamic Threshold Operation
Author :
De Andrade, Maria Glória Caño ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The low-frequency (LF) noise in standard n-channel triple-gate bulk FinFETs with and without dynamic threshold operation is, for the first time, experimentally investigated in the linear and saturation regions. The origin of the noise will be analyzed in order to understand the physical mechanisms involved in this type of noise. The LF noise characteristics indicate that the DTMOS FinFET devices can be a promising candidate for analog and RF applications.
Keywords :
MOSFET; circuit noise; DTMOS FinFET device; bulk triple-gate FinFET; dynamic threshold operation; linear region; low-frequency noise; n-channel FinFET; saturation region; FinFETs; Logic gates; Low-frequency noise; Performance evaluation; Silicon; Silicon on insulator technology; Bulk; DTMOS; low-frequency (LF) noise; triple gate;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2166372
