10-Gb/s Error-Free Silicon Optical Modulator for Both TE and TM Polarized Light

Author

Rasigade, G. ; Ziebell, M. ; Marris-Morini, D. ; Brimont, A. ; Campo, A. M Gutierrez ; Sanchis, P. ; Fédéli, J.M. ; Duan, G.H. ; Cassan, E. ; Vivien, L.

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. Paris-Sud, Orsay, France

Volume

23

Issue

23

fYear

2011

Firstpage

1799

Lastpage

1801

Abstract

We report the first experimental demonstration of a silicon optical modulator based on a pipin diode integrated in a 50- μm radius ring resonator. Large modulation efficiency was obtained with a V_πL_π product of 3 V· cm for both transverse-electric (TE) and transverse-magnetic (TM) input light. Insertion loss of the doped ring resonator was lower than 1 dB and 10-Gb/s operations was demonstrated with an extinction ratio of 5.9 dB for TE and of 5.3 dB for TM polarization. A bit-error rate (BER) lower than 10^-9 was measured in both TE and TM polarizations, proving the potential application of the modulator in optical transmission systems.

Keywords

elemental semiconductors; light polarisation; optical communication equipment; optical losses; optical modulation; optical resonators; p-i-n diodes; silicon; Si; bit rate 10 Gbit/s; error free silicon optical modulator; insertion loss; optical transmission system; pipin diode; ring resonator; size 50 mum; transverse electric polarized light; transverse magnetic polarized light; Bit error rate; Optical modulation; Optical polarization; Optical ring resonators; Optical waveguides; Silicon; Integrated optoelectronics; modulation; ring resonator; silicon;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2011.2169662

Filename

6029286