The p-Ge terahertz laser-properties under pulsed- and mode-locked operation

Author

Hovenier, J. Niels ; Diez, M. Carmen ; Klaassen, Tjeerd O. ; Wenckebach, W. Tom ; Muravjov, Andrej V. ; Pavlov, Sergey G. ; Shastin, Valerie N.

Author_Institution

Dept. of Appl. Phys., Delft Univ. of Technol., Netherlands

Volume

48

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

670

Lastpage

676

Abstract

The results of a detailed study of the optical output of the p-Ge hot hole terahertz laser for pulsed-locked, as well as for mode-locked operation, is reported in this paper. The recently developed technique to achieve active mode locking is described. Results on the shape of the pulses in the small-signal gain, as well as in the saturated gain regime under mode-locked operation, are given. These will be discussed in the light of new results on time- and wavelength-resolved experiments for normal pulsed operation. Under favorable conditions, it is found that trains of pulses with a full width at half maximum pulsewidth of 100 ps can be produced

Keywords

elemental semiconductors; germanium; hot carriers; laser mode locking; semiconductor lasers; submillimetre wave lasers; 100 ps; Ge; active mode locking; full width at half maximum pulsewidth; hot hole terahertz laser; mode-locked operation; normal pulsed operation; pulsed-locked operation; saturated gain regime; small-signal gain; wavelength-resolved experiments; Hot carriers; Laser excitation; Laser mode locking; Light scattering; Optical pulses; Optical pumping; Optical scattering; Phonons; Space vector pulse width modulation; Stimulated emission;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.841958

Filename

841958