Comparison of modulated impurity-concentration InP transferred electron devices for power generation at frequencies above 130 GHz

Author

Judaschke, Rolf

Author_Institution

Arbeitsbereich Hochfrequenztech., Tech. Univ. Hamburg-Harburg, Germany

Volume

48

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

719

Lastpage

724

Abstract

In this paper, InP transferred electron devices of various doping profiles have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies up to 260 GHz. The results are based on an efficient and accurate hydrodynamic simulator, which analyzes the device under both conditions: impressed terminal voltage and realistic load impedances. In comparison with state-of-the-art graded profile diodes, improved performance is demonstrated for modulated impurity-concentration devices for both modes of operation

Keywords

Gunn devices; III-V semiconductors; doping profiles; indium compounds; millimetre wave devices; semiconductor device models; 130 to 260 GHz; InP; InP transferred electron device; doping profile; fundamental mode; harmonic mode; hydrodynamic simulation; modulated impurity concentration; power generation; Equations; Frequency; Gunn devices; High definition video; Hydrodynamics; Impedance; Indium phosphide; Millimeter wave technology; Oscillators; Power generation;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.841964

Filename

841964