DocumentCode :
1334116
Title :
The effects of relative humidity and reducing gases on the temperature coefficient of resonant frequency of ZnO based film bulk acoustic wave resonator
Author :
Qiu, Xiaotun ; Wang, Ziyu ; Zhu, Jie ; Oiler, Jon ; Tang, Rui ; Yu, Cunjiang ; Yu, Hongyu
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Volume :
57
Issue :
9
fYear :
2010
fDate :
9/1/2010 12:00:00 AM
Firstpage :
1902
Lastpage :
1905
Abstract :
This study describes the influence of relative humidity (RH) and reducing gases on the temperature coefficient of resonant frequency (TCF) of ZnO-based film bulk acoustic wave resonator (FBAR). Upon exposure to moisture or reducing gases, the TCF of FBAR decreased. Water molecules can replace adsorbed oxygen on the ZnO surface. This process was less effective at high temperature, resulting in a lower TCF in high RH. Reducing gases, such as acetone, can reduce the density of ZnO through reaction with the adsorbed oxygen, leading to a lower TCF.
Keywords :
II-VI semiconductors; acoustic resonators; adsorbed layers; bulk acoustic wave devices; humidity; oxygen; reduction (chemical); semiconductor thin films; thin film devices; water; wide band gap semiconductors; zinc compounds; FBAR; H2O; O2; TCF; ZnO; acetone; adsorbed oxygen; film bulk acoustic wave resonator; high temperature; moisture; reducing gases; relative humidity; resonant frequency temperature coefficient; Film bulk acoustic resonators; Films; Gases; Humidity; Resonant frequency; Zinc oxide;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2010.1637
Filename :
5585471
Link To Document :
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