• DocumentCode
    1334205
  • Title

    The influence of spatial variations of diffusion length on charge collected by diffusion from ion tracks

  • Author

    Edmonds, Larry D.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    45
  • Issue
    1
  • fYear
    1998
  • fDate
    2/1/1998 12:00:00 AM
  • Firstpage
    30
  • Lastpage
    40
  • Abstract
    Charge collected by diffusion from ion tracks in a semiconductor substrate may be influenced by the substrate diffusion length, which is related to recombination losses. A nonuniform spatial distribution of recombination centers results in a nonuniform diffusion length function. A theoretical analysis shows that, excluding some extreme cases, charge collection is insensitive to spatial variations in the diffusion length function, so it is possible to define an effective diffusion length having the property that collected charge can be approximated by assuming a uniform diffusion length equal to this effective value. Extreme cases that must be excluded are those in which a large number of recombination centers are confined to a narrow region near the substrate boundary.
  • Keywords
    carrier lifetime; electron-hole recombination; elemental semiconductors; silicon radiation detectors; Si; Si radiation detector; collected charge; ion tracks; nonuniform spatial distribution; recombination losses; semiconductor substrate; spatial variations influence; uniform diffusion length; Computer simulation; Diodes; Equations; Helium; Photovoltaic cells; Propulsion; Prototypes; Radiative recombination; Space technology; Substrates;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.659552
  • Filename
    659552