An Analytical Charge Model for Double-Gate Tunnel FETs

Author

Zhang, Lining ; Lin, Xinnan ; He, Jin ; Chan, Mansun

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

59

Issue

12

fYear

2012

Firstpage

3217

Lastpage

3223

Abstract

An analytical charge model for double gate (DG) tunnel FETs (TFETs) is proposed. By splitting the TFET into a series combination of a gated tunnel diode and a DG MOSFET, we solved the Poisson equation with matching boundary conditions to obtain a surface potential model for the DG TFET. Based on that, the source depletion charge and the mobile channel charge are derived. Comparisons between the proposed model and TCAD simulations show good agreements and suggest a 100/0 drain/source channel inversion charge partition. Terminal capacitances calculated based on the proposed charge model are also evaluated and show good agreement with TCAD simulations.

Keywords

Poisson equation; field effect transistors; semiconductor device models; surface potential; technology CAD (electronics); tunnel transistors; DG MOSFET; Poisson equation; TCAD simulations; analytical charge model; double gate tunnel field effect transistors; drain-source channel inversion charge partition; gated tunnel diode; matching boundary conditions; mobile channel charge; source depletion charge; surface potential model; Capacitance; FET circuits; Tunneling; Band-to-band tunneling (BTBT); capacitance model; double gate (DG); tunnel FET (TFET);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2217145

Filename

6353357