Title :
A 15-dBm SiGe BiCMOS PA for 77-GHz Automotive Radar
Author :
Giammello, Vittorio ; Ragonese, Egidio ; Palmisano, Giuseppe
Author_Institution :
Dipt. di Ing. Elettr., Elettron. e Inf., Univ. di Catania, Catania, Italy
Abstract :
This paper presents a 15-dBm power amplifier for 77-GHz automotive radar applications, which is fabricated in a 0.13-μm SiGe:C BiCMOS process featuring bipolar transistors with fT /fmax of 230/280 GHz. The circuit consists of a two-stage pseudodifferential cascode with fully integrated input/output matching networks. State-of-art performance is achieved with the proposed design algorithm and layout optimization. The amplifier demonstrates a figure-of-merit of 2500 achieving a 22.5-dB power gain and a power-added efficiency of 7.5% at 77 GHz, while drawing 130 mA from a 2.5-V voltage supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; circuit optimisation; millimetre wave bipolar transistors; millimetre wave power amplifiers; road vehicle radar; SiGe; SiGe BiCMOS PA; automotive radar; bipolar transistors; current 130 mA; frequency 77 GHz; layout optimization; power amplifier; pseudodifferential cascode; size 0.13 mum; voltage 2.5 V; Automotive applications; BiCMOS integrated circuits; Millimeter wave circuits; Power amplifiers; Transformers; BiCMOS integrated circuits (ICs); IC layout; electromagnetic (EM) simulations; millimeter-wave circuits; power amplifier (PA); transformers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2166802
