DocumentCode :
1334924
Title :
Effective Work Function Modulation by Aluminum Ion Implantation on Hf-Based High- 
/Metal Gate pMOSFET
Author :
Chen, Y.W. ; Lai, C.M. ; Chiang, T.F. ; Cheng, L.W. ; Yu, C.H. ; Chou, C.H. ; Hsu, C.H. ; Chang, W.Y. ; Wu, T.B. ; Lin, C.T.
Author_Institution :
ATD Exploratory Technol. Div., United Microelectron. Corp., Tainan, Taiwan
Volume :
31
Issue :
11
fYear :
2010
Firstpage :
1290
Lastpage :
1292
Abstract :
The impact of aluminum (Al) implantation into TiN/HfO2/ SiO2 on the effective work function is investigated. Al implanted through poly-Si cannot attain sufficient flatband voltage (VFB) shift unless at higher implantation energy. Al implanted through TiN at 1.2 keV with a dose of 5 × 1015 cm-2 raised the VFB to about 250 mV compared with a nonimplanted gate stack. Moreover, the VFB shift can be up to about 800 mV at 2 keV with the same dose level accompanied with slightly equivalent oxide thickness penalty and gate leakage current degradation. Optimized process window to control Al diffusion depth was essential to minimize these impacts.
Keywords :
MOSFET; aluminium; hafnium compounds; high-k dielectric thin films; silicon compounds; titanium compounds; Al; TiN-HfO2-SiO2; effective work function modulation; electron volt energy 1.2 keV; electron volt energy 2 keV; equivalent oxide thickness penalty; gate leakage current degradation; high-k-metal gate pMOSFET; ion implantation; Degradation; Leakage current; Logic gates; Modulation; Silicon; Tin; $hbox{HfO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2066952
Filename :
5585695
Link To Document :
