DocumentCode
1334963
Title
Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator
Author
Rodriguez, Noel ; Navarro, Carlos ; Gamiz, Francisco ; Andrieu, François ; Faynot, Olivier ; Cristoloveanu, Sorin
Author_Institution
Dept. of Electron., Univ. of Granada, Granada, Spain
Volume
33
Issue
12
fYear
2012
Firstpage
1717
Lastpage
1719
Abstract
We report the fabrication and characterization of A2RAM capacitorless memory cell on silicon-on-insulator (SOI). Holes and electrons are separated in two superposed p- and n-channel regions. The retrograde p-n doping in a 36-nm-thick body has been successfully tailored by epitaxial regrowth, without any alteration of the CMOS/SOI process. We document the detailed device operation and its attractive performance in terms of current margin, retention time, and variability.
Keywords
epitaxial growth; random-access storage; semiconductor doping; silicon-on-insulator; A2RAM capacitorless memory cell; SOI; current margin; device operation; epitaxial regrowth; n-channel regions; p-channel regions; retention time; retrograde p-n doping; silicon-on-insulator; size 36 nm; DRAM chips; Doping; Fabrication; Junctions; Random access memory; Silicon on insulator technology; 1T-DRAM; A2RAM; DRAM; capacitorless; silicon-on-insulator (SOI);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2221074
Filename
6353509
Link To Document