A Superjunction Schottky Barrier Diode With Trench Metal–Oxide–Semiconductor Structure

Author

Wang, Ying ; Xu, Likun ; Miao, Zhikun

Author_Institution

Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China

Volume

33

Issue

12

fYear

2012

Firstpage

1744

Lastpage

1746

Abstract

A superjunction Schottky barrier diode with trench metal-oxide-semiconductor (MOS) structure (TM-SJ-SBD) is proposed and studied by 2-D numerical simulations. The device shows the decreasing leakage current, as compared with the common superjunction Schottky barrier diode (SJ-SBD), without considerable degradation of forward characteristics. With optimized parameters, the TM-SJ-SBD attains a breakdown voltage of 178 V, which is similar to that of the SJ-SBD, and a leakage current of 1.57 × 10^-5 A/cm² at 130-V reverse bias, which is 46.5% smaller than that of the SJ-SBD. In addition, the TM-SJ-SBD achieves softer reverse recovery characteristics, and the reverse recovery peak current is 67.9% smaller than that of the SJ-SBD.

Keywords

MIS devices; Schottky diodes; leakage currents; numerical analysis; 2D numerical simulations; MOS structure; TM-SJ-SBD; forward characteristics; leakage current; reverse recovery peak current; superjunction Schottky barrier diode; trench metal-oxide-semiconductor structure; voltage 130 V; voltage 178 V; Degradation; Doping; Leakage current; MOS devices; Schottky barriers; Schottky diodes; Leakage current; Schottky barrier diode (SBD); reverse recovery; softness factor; superjunction (SJ); trench metal–oxide–semiconductor (MOS) structure;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2220117

Filename

6353510