Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an $\hbox {Al}{-}\hbox {TiW}{-}\hbox {Pd}_{2}\hbox {Si/n-Si}$ Schottky Device at Two

In this paper, an Al-TiW-Pd₂ Si/n-Si Schottky diode with an area of 6 × 10^-6 cm² was fabricated using the photolithographic technique. The electrical and dielectric properties of the TiW-Pd₂Si/n-Si structure have been studied in detail by using experimental capacitance-voltage-temperature (C-V -T) and conductance-voltage-temperature (G/w-V -T) characteristics in the temperature range of 300-400 K comparing at two frequencies. It has been found that the forward-bias C-V- T and G/w -V-T plots exhibit a peak at 50 kHz, particularly at high temperatures. However, the peaks of C-V -T and G/w -T plots seen clearly at low frequency tend to disappear at 500 kHz, at which only the free carriers within the majority bands are able to respond to the small excitation alternating-current signal. The effect of the series resistance Rs of TiW-Pd₂Si/n-Si structures on the abnormal behaviors of C- V-T and G/w-V -T profiles was investigated. It was found that Rs decreases with increasing temperature at the range of 310-360 K. The dielectric properties were found to be a strong function of temperature at two frequencies. The results indicate that the interfacial polarization can be more easily occurred at 50 kHz and high temperatures.