Class-F Power Amplifier With High Power Added Efficiency Using Bowtie-Shaped Harmonic Control Circuit

Author

Hayati, Mohsen ; Sheikhi, Akram ; Grebennikov, Andrei

Author_Institution

Dept. of Electr. Eng., Razi Univ., Kermanshah, Iran

Volume

25

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

133

Lastpage

135

Abstract

In this letter, a Class-F power amplifier with high power added efficiency (PAE) is reported. The novel load network satisfies the optimum load resistance at fundamental frequency, second and third harmonics. The optimum value of the circuit parameters is obtained by harmonic balanced analysis at drain voltage 3.1 V. The results show that proposed PA at 2.4 GHz achieved the PAE of approximately 80% at 23.6 dBm output power for single stage pHEMT.

Keywords

harmonic analysis; high electron mobility transistors; radiofrequency power amplifiers; bowtie-shaped harmonic control circuit; class-F power amplifier; frequency 2.4 GHz; harmonic balanced analysis; high power added efficiency; load network; optimum load resistance; single stage pHEMT; voltage 3.1 V; Harmonic analysis; Impedance; PHEMTs; Power generation; Power system harmonics; Tuning; Wireless communication; Class-F; harmonic control circuit (HCC); power amplifier (PA) and power added efficiency (PAE);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2382649

Filename

7006694