مرکز منطقه ای اطلاع رساني علوم و فناوري - Metal–Oxide–High-<formula formulatype="inline"> <img src="/images/tex/348.gif" alt="k"> </formula> -Oxide–Silicon Memory Device Using a Ti-Doped <formula formulatype="inline"> <img src="/images/tex/19964.gif" alt="\\hbox {Dy}

Title :

Metal–Oxide–High- $k$ -Oxide–Silicon Memory Device Using a Ti-Doped $\\hbox {Dy}_{2}\\hbo</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Fa-Hsyang Chen ; Tung-Ming Pan ; Fu-Chien Chiu</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Chang Gung Univ., Taoyuan, Taiwan</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>58</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2011</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3847</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>3851</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>In this paper, we propose Al/SiO<sub>2</sub>/Dy<sub>2</sub>O<sub>3</sub>/ SiO<sub>2</sub>/ Si, Al/SiO<sub>2</sub>/DyTi<sub>x</sub>O<sub>y</sub>/SiO<sub>2</sub>/Si, and Al/Al<sub>2</sub>O<sub>3</sub>/DyTi<sub>x</sub>O<sub>y</sub>/SiO<sub>2</sub>/Si as charge-trapping memory devices incorporating high-<i>k</i> Dy<sub>2</sub>O<sub>3</sub> and Ti-doped Dy<sub>2</sub>O<sub>3</sub> films as charge-trapping layers, and SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> films as blocking layers. The Al/Al<sub>2</sub>O<sub>3</sub>/DyTi<sub>x</sub> O<sub>y</sub>/ SiO<sub>2</sub>/Si memory device exhibited a larger memory window of ~4.5 V (measured at a sweep voltage range of ±9 V), a smaller charge loss of ~20% (measured time up to 10<sup>6</sup>s and at 85<sup>°</sup>C), and better endurance (program/erase cycles up to 10<sup>4</sup>) than other devices. These results suggest higher probability for trapping the charge carrier due to the Ti content in the Dy<sub>2</sub>O<sub>3</sub> film, which produce a high dielectric constant and suppress the formation of the Dy-silicate layer, and create a deep trap level in the DyTi<sub>x</sub>O<sub>y</sub> film.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>MOS memory circuits; alumina; dysprosium compounds; elemental semiconductors; high-k dielectric thin films; permittivity; silicon; silicon compounds; titanium compounds; Al-Al<sub>2</sub>O<sub>3</sub>-DyTi<sub>x</sub>O<sub>y</sub>-SiO<sub>2</sub>-Si; Dy-silicate layer; Dy<sub>2</sub>O<sub>3</sub>:Ti; blocking layer; charge carrier trapping probability; charge-trapping layer; charge-trapping memory devices; deep trap level; high dielectric constant; metal-oxide-high-k -oxide-silicon memory device; Aluminum oxide; Educational institutions; Electron traps; Logic gates; Silicon; Tunneling; <formula formulatype=$ $hbox{Al}_{2}hbox{O}_{3}$; $hbox{Dy}_{2}hbox{O}_{3}$ ; Ti-doped $ hbox{Dy}_{2}hbox{O}_{3}$; charge-trapping layer; nonvolatile memory;