Title :
Carrier Lifetime and Electron Spin Relaxation Time in (110)-Oriented GaAs–AlGaAs Quantum-Well Micro-Posts
Author :
Yokota, Nobuhide ; Ikeda, Kazuhiro ; Nishizaki, Yoshitaka ; Koh, Shinji ; Kawaguchi, Hitoshi
Author_Institution :
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Nara, Japan
Abstract :
Carrier lifetime and electron spin relaxation time in (110)-oriented GaAs-AlGaAs quantum-well (QW) micro-posts are investigated by polarization- and time-resolved photoluminescence measurements. The long electron spin relaxation time in QWs on GaAs (110) is found to be preserved even when the sidewall boundaries with fast surface recombination are introduced and the carrier lifetime is drastically shortened. Rate equation analysis shows that spin-controlled vertical-cavity surface-emitting lasers with such (110)-QW micro-posts will exhibit faster switching of lasing circular polarizations than that we previously demonstrated. In particular, 20-GHz switching is expected with 0.5-μm posts.
Keywords :
III-V semiconductors; aluminium compounds; carrier lifetime; electron relaxation time; gallium arsenide; photoluminescence; quantum well lasers; semiconductor quantum wells; surface recombination; time resolved spectra; (110)-oriented GaAs-AlGaAs quantum-well microposts; GaAs; GaAs-AlGaAs; carrier lifetime; electron spin relaxation time; frequency 20 GHz; lasing circular polarization switching; polarization-resolved photoluminescence measurements; rate equation analysis; sidewall boundaries; spin-controlled vertical-cavity surface-emitting lasers; surface recombination; time-resolved photoluminescence measurements; Gallium arsenide; Optical polarization; Optical switches; Radiative recombination; Semiconductor device measurement; Vertical cavity surface emitting lasers; (110)-oriented quantum wells (QWs); Carrier lifetime; electron spin relaxation time; micro-posts; spin lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2079927
