Title :
Effect of gate resistance on high-frequency power switching efficiencies of advanced power MOSFETs
Author_Institution :
General Electric Co., Schenectady, NY, USA
fDate :
4/1/1990 12:00:00 AM
Abstract :
Accurate gate resistance values for large-area power MOSFETs have been obtained from calorimetric power loss measurements. It is shown that advanced power MOSFETs fabricated using refractory silicide gates exhibit a fivefold reduction in the gate resistance compared to conventional power MOSFETs with heavily POCl3-doped polysilicon gates. Power MOSFETs with integral Schottky diodes are shown to further reduce the resistive-gate power dissipation. A simple analysis is used to evaluate the switching efficiency of power MOSFETs as a function of output current and switching frequency
Keywords :
insulated gate field effect transistors; power transistors; semiconductor switches; switching; calorimetric power loss measurements; gate resistance; high-frequency; integral Schottky diodes; large area devices; output current; power MOSFETs; power switching efficiencies; refractory silicide gates; switching frequency; Electrical resistance measurement; Immune system; Loss measurement; MOSFETs; Power dissipation; Power measurement; Schottky diodes; Silicidation; Switching frequency; Switching systems;
Journal_Title :
Solid-State Circuits, IEEE Journal of
