DocumentCode
1335461
Title
Widely Tunable High-Power Semiconductor Disk Laser With Nonresonant AR-Assisted Gain Element on Diamond Heat Spreader
Author
Borgentun, C. ; Hessenius, C. ; Bengtsson, J. ; Fallahi, M. ; Larsson, A.
Author_Institution
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Goteborg, Sweden
Volume
3
Issue
5
fYear
2011
Firstpage
946
Lastpage
953
Abstract
We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered spectral gain characteristics. For heat removal, a flip-chip bonding scheme on diamond was used. To provide high active mirror reflectance over a large wavelength region, the layered structure of the GE formed a nonresonant subcavity assisted by an antireflective structure. A peak output power of more than 7.5 W and a tuning range of 32 nm around the center wavelength of 995 nm were obtained.
Keywords
antireflection coatings; diamond; flip-chip devices; laser mirrors; laser tuning; optical pumping; semiconductor lasers; antireflective structure; broadband gain element; diamond; flip-chip bonding; heat removal; heat spreader; high active mirror reflectance; nonresonant subcavity; optically pumped semiconductor disk laser; spectral gain characteristics; thermal management; wavelength 32 nm; wavelength 995 nm; widely tunable high-power semiconductor disk laser; Copper; Diamond-like carbon; Heat sinks; Laser excitation; Power generation; Semiconductor lasers; Tuning; Tunable lasers; multilayer interference coatings; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Journal, IEEE
Publisher
ieee
ISSN
1943-0655
Type
jour
DOI
10.1109/JPHOT.2011.2169947
Filename
6030901
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