Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs

Author

Chen, Chia-Yu ; Tornblad, Olof ; Dutton, Robert W.

Author_Institution

Center for Integrated Syst., Stanford Univ., Stanford, CA, USA

Volume

57

Issue

12

fYear

2009

Firstpage

3389

Lastpage

3394

Abstract

Advanced harmonic balance simulation capabilities have been used to investigate linearity behavior in RF power laterally diffused metal-oxide semiconductor (LDMOS) devices with different laterally graded channel doping profiles. Harmonic balance analysis provides relevant device information from device-level simulations and yields performance metrics of RF circuits. The linearity behavior of simple quasi-1-D structures with different graded channel doping profiles was investigated; the analysis was then extended to a more realistic power LDMOS device. The third-order intermodulation distortion product reveals the important role of lateral channel doping. The analysis lays groundwork for device optimization for improved linearity.

Keywords

UHF field effect transistors; doping profiles; intermodulation distortion; power MOSFET; semiconductor doping; LDMOS; RF power MOSFET; device optimization; harmonic balance analysis; harmonic balance simulation; lateral channel doping; laterally diffused metal-oxide semiconductor device; laterally graded channel doping profile; linearity analysis; quasi1D structures; third-order intermodulation distortion product; Channel engineering; laterally diffused metal– oxide semiconductor (LDMOS); linearity;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2009.2034070

Filename

5337902