Title :
Linearity Analysis of Lateral Channel Doping in RF Power MOSFETs
Author :
Chen, Chia-Yu ; Tornblad, Olof ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
Abstract :
Advanced harmonic balance simulation capabilities have been used to investigate linearity behavior in RF power laterally diffused metal-oxide semiconductor (LDMOS) devices with different laterally graded channel doping profiles. Harmonic balance analysis provides relevant device information from device-level simulations and yields performance metrics of RF circuits. The linearity behavior of simple quasi-1-D structures with different graded channel doping profiles was investigated; the analysis was then extended to a more realistic power LDMOS device. The third-order intermodulation distortion product reveals the important role of lateral channel doping. The analysis lays groundwork for device optimization for improved linearity.
Keywords :
UHF field effect transistors; doping profiles; intermodulation distortion; power MOSFET; semiconductor doping; LDMOS; RF power MOSFET; device optimization; harmonic balance analysis; harmonic balance simulation; lateral channel doping; laterally diffused metal-oxide semiconductor device; laterally graded channel doping profile; linearity analysis; quasi1D structures; third-order intermodulation distortion product; Channel engineering; laterally diffused metal– oxide semiconductor (LDMOS); linearity;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2009.2034070
