Near-Infrared Organic Light-Emitting Diodes Based on Donor-pi-Acceptor Oligomers

Author

Sharbati, Mohammad Taghi ; Panahi, Farhad ; Gharavi, Alireza

Author_Institution

Electr. & Electron. Eng. Dept., Shiraz Univ. of Technol., Shiraz, Iran

Volume

22

Issue

22

fYear

2010

Firstpage

1695

Lastpage

1697

Abstract

This letter reports efficient near-infrared (NIR) electroluminescence (EL) of organic light-emitting diodes (OLEDs) based on two donor-pi-acceptor oligomers. The energy gap can be tuned by changing the conjugated length, strengths of the acceptor component, and nonplanarity. EL with peak emission wavelengths of 775 and 905 nm were observed from the two NIR oligomers. External quantum efficiencies up to 3.54%, electrical-to-optical power efficiencies up to 15.8 mW/W, and turn-on voltage of 4.5 V were achieved in OLEDs based on these NIR emitters.

Keywords

electroluminescence; energy gap; impurity states; organic compounds; organic light emitting diodes; OLED; acceptor component; conjugated length; donor-pi-acceptor oligomers; electrical-to-optical power efficiency; energy gap; near infrared organic light emitting diodes; near-infrared electroluminescence; nonplanarity; quantum efficiency; Absorption; Compounds; Electroluminescence; Ions; Materials; Organic light emitting diodes; Photoluminescence; Electroluminescence (EL); near-infrared (NIR); organic light-emitting diode (OLED);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2081358

Filename

5585810