DocumentCode :
1335825
Title :
1 W CW reliable λ=730 nm aluminium-free active layer diode laser
Author :
Rusli, S. ; Al-Muhanna, A. ; Earles, T. ; Mawst, L.J.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Volume :
36
Issue :
7
fYear :
2000
fDate :
3/30/2000 12:00:00 AM
Firstpage :
630
Lastpage :
631
Abstract :
1 W continuous wave (CW) reliable operation (~1000 h) in large transverse spot-size (d/T=0.55 μm), compressively strained, InGaAsP (λ=0.73 μm)-active region diode lasers is demonstrated. The use of tensile-strained InGaP barrier layers provides strain-compensation and results in a weak temperature sensitivity for the threshold current (T0=125 K) and external differential quantum efficiency (T1=410 K)
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser reliability; semiconductor lasers; 1 W; 730 nm; CW reliable operation; InGaAsP; InGaAsP active layer diode laser; InGaP barrier layer; compressive strain; external differential quantum efficiency; strain compensation; temperature sensitivity; tensile strain; threshold current; transverse spot size;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000317
Filename :
842205
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1335825
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