Title :
Autocorrelation of femtosecond pulses from 415-630 nm using GaN laser diode
Author :
Loza-Alvarez, P. ; Sibbett, W. ; Reid, D.T.
Author_Institution :
J.F. Allen Res. Labs., St. Andrews Univ., UK
fDate :
3/30/2000 12:00:00 AM
Abstract :
Using the two-photon response of a commercial 39 3nm GaN laser diode the authors have measured intensity and interferometric second-order autocorrelations of visible femtosecond pulses in the 415-630 nm wavelength region for pulse energies as low as 1 pJ
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; optical correlation; semiconductor lasers; two-photon processes; 1 pJ; 415 to 630 nm; GaN; GaN laser diode; optical autocorrelation; two-photon response; visible femtosecond pulse;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000530