Title :
High-performance InGaAs-InGaAlAs 1.83 μm lasers
Author :
Kuang, G.K. ; Bohm, G. ; Grau, M. ; Rosel, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Germany
fDate :
3/30/2000 12:00:00 AM
Abstract :
1.83 μm InGaAs-InGaAlAs strained-layer quantum well (QW) lasers have been fabricated. A CW threshold current density of 290 A/cm2 at 15°C. A characteristic temperature of 65 K and a maximum CW operating temperature of 94°C have been achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.83 micron; 15 to 94 C; CW threshold current density; InGaAs-InGaAlAs; InGaAs-InGaAlAs strained-layer quantum well laser; characteristic temperature; maximum CW operating temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000484
