• DocumentCode
    1335844
  • Title

    High-performance InGaAs-InGaAlAs 1.83 μm lasers

  • Author

    Kuang, G.K. ; Bohm, G. ; Grau, M. ; Rosel, G. ; Amann, M.-C.

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. Munchen, Germany
  • Volume
    36
  • Issue
    7
  • fYear
    2000
  • fDate
    3/30/2000 12:00:00 AM
  • Firstpage
    634
  • Lastpage
    636
  • Abstract
    1.83 μm InGaAs-InGaAlAs strained-layer quantum well (QW) lasers have been fabricated. A CW threshold current density of 290 A/cm2 at 15°C. A characteristic temperature of 65 K and a maximum CW operating temperature of 94°C have been achieved
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; 1.83 micron; 15 to 94 C; CW threshold current density; InGaAs-InGaAlAs; InGaAs-InGaAlAs strained-layer quantum well laser; characteristic temperature; maximum CW operating temperature;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000484
  • Filename
    842208
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1335844