Title :
Very low threshold current density operation of 1.5 μm DFB lasers with wire-like active regions
Author :
Nakamura, M. ; Nunoya, N. ; Yasumoto, H. ; Morshed, M. ; Fukuda, K. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
fDate :
3/30/2000 12:00:00 AM
Abstract :
Very low threshold 1.5 μm-wavelength GaInAsP/InP distributed feedback lasers consisting of deeply etched double quantum-well wire-like active regions have been successfully realised by CH4 /H2 reactive ion etching and metal organic vapour phase epitaxial regrowth. A threshold current density Jth of as low as 94 A/cm2 was achieved for an active region width of 115 nm and cavity length of 600 μm
Keywords :
gallium arsenide; 1.5 micron; CH4/H2 reactive ion etching; GaInAsP-InP; GaInAsP/InP distributed feedback laser; double quantum well wire-like active region; metal organic vapour phase epitaxial regrowth; threshold current density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000509
