Title :
Distributed amplifier (DC-40 GHz) for high-speed optical communications
Author :
Villain, F. ; Campovecchio, M. ; Mons, S. ; Nebus, J.M. ; Patent, G. ; Deborgies, Francois
Author_Institution :
United Monolithic Semicond., Orsay, France
fDate :
3/30/2000 12:00:00 AM
Abstract :
A novel n-stage distributed amplifier architecture for high-speed optical links is reported. The circuit topology is based on specific refinements necessitated by the photoreceiver application. A three-stage (DC-40 GHz) monolithic microwave integrated circuit amplifier was manufactured in a 0.25μm AlGaAs/GaAs pHEMT process at the UMS foundry and integrated in a photoreceiver module
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; distributed amplifiers; gallium arsenide; optical fibre communication; optical receivers; 0 to 40 GHz; 0.25 micron; AlGaAs-GaAs; UMS foundry; circuit topology; high-speed optical communications; high-speed optical links; monolithic microwave integrated circuit amplifier; n-stage distributed amplifier architecture; pHEMT process; photoreceiver application;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000474
