Title :
Accumulation and depletion in InAs epilayers
fDate :
3/30/2000 12:00:00 AM
Abstract :
Thin heteroepitaxial layers of In0.8Al0.2As grown on InAs surfaces by molecular beam epitaxy can reduce the density of surface states which pin the Fermi level and cause surface accumulation. Biased capacitance-voltage and gated Hall measurements indicate that InAs surfaces can be driven through the flat-band into depletion with the density of surface states reduced to ~1.5×10 12 cm-2 eV-1 below the Fermi level
Keywords :
Fermi level; III-V semiconductors; accumulation layers; indium compounds; semiconductor epitaxial layers; surface states; Fermi level; In0.8Al0.2As-InAs; InAs; InAs epilayers; InAs surfaces; MBE; biased capacitance-voltage measurements; depletion; gated Hall measurements; molecular beam epitaxy; surface accumulation; surface states density reduction; thin heteroepitaxial layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000519
