High-frequency noise performance of SiGe p-channel MODFETs

Author

Koester, Steven J. ; Chu, J.O. ; Webster, C.S.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

36

Issue

7

fYear

2000

fDate

3/30/2000 12:00:00 AM

Firstpage

674

Lastpage

675

Abstract

For the first time, an investigation into the microwave noise performance of SiGe-based MODFETs is presented. The devices were 0.1 μm gate-length p-channel MODFETs fabricated on a high-mobility SiGe strained-layer heterostructure grown by UHV-CVD and had a unity gain cutoff frequency f_T of 42 GHz and maximum frequency of oscillation f_max of 69 GHz at a drain-to-source bias voltage V_ds of -0.6 V. A minimum noise figure F_min of 1.1 dB and an associated gain G_a of 18 dB were obtained at 3 GHz, while values of F_min=1.7 dB and G_a=12 dB were obtained at 10 GHz. These values are comparable to those of SiGe production HBTs, and demonstrate the suitability of SiGe MODFETs for RF and microwave communications applications

Keywords

Ge-Si alloys; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; semiconductor materials; 0.1 micron; 1.1 to 1.7 dB; 12 to 18 dB; 3 to 10 GHz; 42 GHz; 69 GHz; HEMT; HF noise performance; SiGe; SiGe p-channel MODFETs; UHV-CVD; high-frequency noise performance; high-mobility SiGe strained-layer heterostructure; microwave noise performance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000512

Filename

842234