DocumentCode
1336027
Title
Low frequency noise in GaAs heterodimensional junction field effect transistors
Author
Pala, Nezih ; Lü, J.q. ; Shur, M.S.
Author_Institution
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
36
Issue
7
fYear
2000
fDate
3/30/2000 12:00:00 AM
Firstpage
675
Lastpage
677
Abstract
An investigation is presented into the low frequency noise in GaAs heterodimensional junction field effect transistors (HD JFETs) at room and elevated temperatures. The Hooge parameter at zero gate bias was calculated to be 2×10-3 for the devices. The temperature dependence of the noise was used to determine the trap level with an activation energy of 0.7 eV
Keywords
1/f noise; III-V semiconductors; gallium arsenide; junction gate field effect transistors; semiconductor device measurement; semiconductor device noise; GaAs; GaAs heterodimensional JFET; Hooge parameter; LF noise; junction field effect transistors; low frequency noise; temperature dependence; trap level;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000498
Filename
842235
Link To Document