Title :
Low frequency noise in GaAs heterodimensional junction field effect transistors
Author :
Pala, Nezih ; Lü, J.q. ; Shur, M.S.
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
3/30/2000 12:00:00 AM
Abstract :
An investigation is presented into the low frequency noise in GaAs heterodimensional junction field effect transistors (HD JFETs) at room and elevated temperatures. The Hooge parameter at zero gate bias was calculated to be 2×10-3 for the devices. The temperature dependence of the noise was used to determine the trap level with an activation energy of 0.7 eV
Keywords :
1/f noise; III-V semiconductors; gallium arsenide; junction gate field effect transistors; semiconductor device measurement; semiconductor device noise; GaAs; GaAs heterodimensional JFET; Hooge parameter; LF noise; junction field effect transistors; low frequency noise; temperature dependence; trap level;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000498
