DocumentCode
1336037
Title
Diagnostic of silicon carbide surge arresters using leakage current measurements
Author
Gakiya Kanashiro, Arnaldo ; Zanotti, M. ; Futoshi Obase, Paulo ; Bacega, W.R.
Author_Institution
Inst. de Eletrotecnica e Energia, USP, Brazil
Volume
9
Issue
5
fYear
2011
Firstpage
761
Lastpage
766
Abstract
Nowadays, the zinc oxide surge arresters (ZnO) are widely used in power systems, however, a large number of silicon carbide surge arresters (SiC) are still in service in the utilities. On the other hand, it is not possible to replace all SiC surge arresters in a short time period, being necessary to review the maintenance program taking into account the surge arresters that are more degraded. In this context, a research project was established between the University of São Paulo and the electrical utility CTEEP, aiming the investigation of its SiC surge arresters. This work shows that the leakage current measurement, a common diagnostic method for the ZnO surge arresters, can provide useful information related to the condition of the SiC surge arresters. Analysis of amplitude and distortion of the leakage current, also considering thermovision measurements, result in better evaluation of the SiC surge arresters.
Keywords
II-VI semiconductors; arresters; leakage currents; maintenance engineering; silicon compounds; zinc compounds; CTEEP electrical utility; SiC; ZnO; leakage current; maintenance program; surge arresters; thermovision measurements; Arresters; Current measurement; Distortion measurement; Leakage current; Silicon carbide; Surges; Zinc oxide; degradation; leakage current; silicon carbide; surge-arresters; thermovision;
fLanguage
English
Journal_Title
Latin America Transactions, IEEE (Revista IEEE America Latina)
Publisher
ieee
ISSN
1548-0992
Type
jour
DOI
10.1109/TLA.2011.6030987
Filename
6030987
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