• DocumentCode
    1336037
  • Title

    Diagnostic of silicon carbide surge arresters using leakage current measurements

  • Author

    Gakiya Kanashiro, Arnaldo ; Zanotti, M. ; Futoshi Obase, Paulo ; Bacega, W.R.

  • Author_Institution
    Inst. de Eletrotecnica e Energia, USP, Brazil
  • Volume
    9
  • Issue
    5
  • fYear
    2011
  • Firstpage
    761
  • Lastpage
    766
  • Abstract
    Nowadays, the zinc oxide surge arresters (ZnO) are widely used in power systems, however, a large number of silicon carbide surge arresters (SiC) are still in service in the utilities. On the other hand, it is not possible to replace all SiC surge arresters in a short time period, being necessary to review the maintenance program taking into account the surge arresters that are more degraded. In this context, a research project was established between the University of São Paulo and the electrical utility CTEEP, aiming the investigation of its SiC surge arresters. This work shows that the leakage current measurement, a common diagnostic method for the ZnO surge arresters, can provide useful information related to the condition of the SiC surge arresters. Analysis of amplitude and distortion of the leakage current, also considering thermovision measurements, result in better evaluation of the SiC surge arresters.
  • Keywords
    II-VI semiconductors; arresters; leakage currents; maintenance engineering; silicon compounds; zinc compounds; CTEEP electrical utility; SiC; ZnO; leakage current; maintenance program; surge arresters; thermovision measurements; Arresters; Current measurement; Distortion measurement; Leakage current; Silicon carbide; Surges; Zinc oxide; degradation; leakage current; silicon carbide; surge-arresters; thermovision;
  • fLanguage
    English
  • Journal_Title
    Latin America Transactions, IEEE (Revista IEEE America Latina)
  • Publisher
    ieee
  • ISSN
    1548-0992
  • Type

    jour

  • DOI
    10.1109/TLA.2011.6030987
  • Filename
    6030987