DocumentCode :
1336037
Title :
Diagnostic of silicon carbide surge arresters using leakage current measurements
Author :
Gakiya Kanashiro, Arnaldo ; Zanotti, M. ; Futoshi Obase, Paulo ; Bacega, W.R.
Author_Institution :
Inst. de Eletrotecnica e Energia, USP, Brazil
Volume :
9
Issue :
5
fYear :
2011
Firstpage :
761
Lastpage :
766
Abstract :
Nowadays, the zinc oxide surge arresters (ZnO) are widely used in power systems, however, a large number of silicon carbide surge arresters (SiC) are still in service in the utilities. On the other hand, it is not possible to replace all SiC surge arresters in a short time period, being necessary to review the maintenance program taking into account the surge arresters that are more degraded. In this context, a research project was established between the University of São Paulo and the electrical utility CTEEP, aiming the investigation of its SiC surge arresters. This work shows that the leakage current measurement, a common diagnostic method for the ZnO surge arresters, can provide useful information related to the condition of the SiC surge arresters. Analysis of amplitude and distortion of the leakage current, also considering thermovision measurements, result in better evaluation of the SiC surge arresters.
Keywords :
II-VI semiconductors; arresters; leakage currents; maintenance engineering; silicon compounds; zinc compounds; CTEEP electrical utility; SiC; ZnO; leakage current; maintenance program; surge arresters; thermovision measurements; Arresters; Current measurement; Distortion measurement; Leakage current; Silicon carbide; Surges; Zinc oxide; degradation; leakage current; silicon carbide; surge-arresters; thermovision;
fLanguage :
English
Journal_Title :
Latin America Transactions, IEEE (Revista IEEE America Latina)
Publisher :
ieee
ISSN :
1548-0992
Type :
jour
DOI :
10.1109/TLA.2011.6030987
Filename :
6030987
Link To Document :
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