DocumentCode
1336038
Title
Low temperature GaAs/Si direct wafer bonding
Author
Alexe, M. ; Dragoi, Viorel ; Reiche, Manfred ; Gösele, U.
Author_Institution
Max-Planck Inst. of Microstruct. Phys., Halle, Germany
Volume
36
Issue
7
fYear
2000
fDate
3/30/2000 12:00:00 AM
Firstpage
677
Lastpage
678
Abstract
GaAs-Si low temperature bonding has been achieved using spin-on-glass as the intermediate layer. Interface energies of ~1.7 J/m 2 were obtained after thermal annealing at only 200°C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5-10 μm
Keywords
III-V semiconductors; annealing; elemental semiconductors; gallium arsenide; silicon; wafer bonding; 200 C; 5 to 10 micron; GaAs-Si; GaAs/Si direct wafer bonding; SOG intermediate layer; interface energy; low temperature direct wafer bonding; spin-on-glass; thermal annealing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000507
Filename
842236
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