Title :
Low temperature GaAs/Si direct wafer bonding
Author :
Alexe, M. ; Dragoi, Viorel ; Reiche, Manfred ; Gösele, U.
Author_Institution :
Max-Planck Inst. of Microstruct. Phys., Halle, Germany
fDate :
3/30/2000 12:00:00 AM
Abstract :
GaAs-Si low temperature bonding has been achieved using spin-on-glass as the intermediate layer. Interface energies of ~1.7 J/m 2 were obtained after thermal annealing at only 200°C. The interface energy is sufficiently high to allow thinning of the GaAs wafer down to 5-10 μm
Keywords :
III-V semiconductors; annealing; elemental semiconductors; gallium arsenide; silicon; wafer bonding; 200 C; 5 to 10 micron; GaAs-Si; GaAs/Si direct wafer bonding; SOG intermediate layer; interface energy; low temperature direct wafer bonding; spin-on-glass; thermal annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000507
