Title :
Extraction method for non-quasi-static gate resistance of RF MOSFETs
Author :
Lee, Ho-Jun ; Lee, Sang-Rim
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Yongin, South Korea
Abstract :
Using a new extraction method based on the physical input equivalent circuit separating the overlap component from the gate capacitance, the non-quasi-static gate resistance in a small-signal RF MOSFET model is accurately determined. This new method results in much better agreements up to 30GHz between the measured and modelled data of Y11+Y12 than a conventional one.
Keywords :
MOSFET; equivalent circuits; microwave field effect transistors; extraction method; frequency 30 GHz; gate capacitance; non-quasi-static gate resistance; physical input equivalent circuit; small-signal RF MOSFET model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.3135
