DocumentCode :
1336451
Title :
Gain Recovery Acceleration by Enhancing Differential Gain in Quantum Well Semiconductor Optical Amplifiers
Author :
Qin, Cui ; Huang, Xi ; Zhang, Xinliang
Author_Institution :
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
Volume :
47
Issue :
11
fYear :
2011
Firstpage :
1443
Lastpage :
1450
Abstract :
It is demonstrated theoretically that the quantum well (QW) semiconductor optical amplifiers (SOAs) with high differential gain will show fast gain recovery dynamic characteristics. Based on the calculation of energy band structure, the effects of compressive strain and p-type modulation doping on the gain, the differential gain, and linewidth enhancement factor (a-factor) are investigated. The peak of the differential gain spectrum shifts to longer wavelength, and the peak value is significantly enhanced by increasing compressive strain. Meanwhile the gain is obviously increased by increasing the p-type modulation doping concentration. By comparing the gain and phase recovery dynamics in three different types of SOA samples, it is shown that the QW SOA with highest differential gain has the shortest gain recovery time among the three samples.
Keywords :
high-speed optical techniques; optical modulation; quantum well lasers; semiconductor doping; semiconductor optical amplifiers; spectral line shift; compressive strain; differential gain spectrum shifts; gain recovery acceleration; gain recovery time; linewidth enhancement factor; p-type modulation doping; quantum well semiconductor optical amplifiers; Charge carrier density; Equations; Mathematical model; Optical variables control; Quantum well devices; Semiconductor optical amplifiers; Strain; Doping; quantum wells; semiconductor optical amplifiers; strain;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2170190
Filename :
6031893
Link To Document :
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