Title :
A Physical Model for Work-Function Variation in Ultra-Short Channel Metal-Gate MOSFETs
Author :
Rasouli, Seid Hadi ; Xu, Chuan ; Singh, Navab ; Banerjee, Kaustav
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
Abstract :
In this letter, an accurate physical model for work-function variation (WFV) relevant to ultrashort-channel (<; 32 nm) MOSFETs has been formulated that considers the work function and size of the individual grains in determining the local MOS band structure. The proposed model is shown to be much more accurate than the most recently published model. Additionally, using this new model, WFV effect in a 3-D device can be captured using 2-D device simulation, resulting in a significantly lower simulation time.
Keywords :
MOSFET; semiconductor device models; work function; 2D device simulation; 3D device; individual grain; local MOS band structure; ultrashort channel metal-gate MOSFET; work function variation; Grain size; Integrated circuit modeling; Logic gates; Metals; Predictive models; Solid modeling; Threshold voltage; Grain orientations (GOs); metal gate; quasi-ballistic transport; work-function variation (WFV);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2166531
