Gain and Fan-Out in a Current-Field Driven Spin Transistor With an Assisting AC Magnetic Field

Author

Konishi, Katsunori ; Nozaki, Takayuki ; Kubota, Hitoshi ; Fukushima, Akio ; Yuasa, Shinji ; Suzuki, Yoshishige

Author_Institution

Osaka Univ., Toyonaka, Japan

Volume

48

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

1134

Lastpage

1138

Abstract

We investigated gain and fan-out in a current-field driven spin transistor that is driven by a current-induced magnetic field. The basic structure of the transistor consisted of a coplanar waveguide for magnetic field application and an MgO-based magnetic tunnel junction with high magnetoresistance and low resistance area product. Under an assisting ac magnetic field and a dc bias voltage of 0.4 V, we demonstrated substantial power gain of 130, current gain of 4.9, and a fan-out value of 5.7. The scaling of the fan-out value in this device is discussed in detail. The current-field driven spin transistor is proven to be a promising candidate as a basic component of a nonvolatile logic device.

Keywords

coplanar waveguides; magnetoelectronics; transistors; tunnelling magnetoresistance; MgO; MgO-based magnetic tunnel junction; assisting AC magnetic field; coplanar waveguide; current gain; current-field driven spin transistor; current-induced magnetic field; dc bias voltage; fan-out value scaling; magnetic field application; magnetoresistance; nonvolatile logic device component; power gain; resistance area product; transistor structure; voltage 0.4 V; Junctions; Magnetic fields; Magnetic tunneling; Resistance; Saturation magnetization; Thermal stability; Transistors; Fan-out; magnetic tunnel junctions (MTJs); spin transistor; spintronics;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2011.2170085

Filename

6031922