Title :
Design of Photonic Crystal Membrane-Reflector-Based VCSELs
Author :
Zhao, D. ; Yang, H. ; Chuwongin, S. ; Seo, J.H. ; Ma, Z. ; Zhou, W.
Author_Institution :
Dept. of Electr. Eng., Univ. of Texas at Arlington, Arlington, TX, USA
Abstract :
We present here the cavity design of distributed-Bragg-reflector-free ultracompact Fano-resonance photonic crystal membrane-reflector vertical-cavity surface-emitting lasers on silicon, which consists of a III-V quantum-well active region sandwiched in between two single-layer Si membrane reflectors (MRs). The Si reflectors are designed to have peak reflection band around 1550 nm, with over 300-nm reflection band. The complete laser cavity resonance was determined, with considerations of unique phase and field distribution characteristics associated with these single-layer MRs. The confinement factor of the lasing mode is optimized around 6%, which enables low threshold lasing.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; infrared spectra; laser cavity resonators; laser mirrors; laser modes; membranes; optical design techniques; photonic crystals; quantum well lasers; reflection; silicon-on-insulator; surface emitting lasers; III-V quantum-well active region; Si; VCSEL; cavity design; confinement factor; distributed-Bragg-reflector-free ultracompact Fano-resonance; field distribution; laser cavity resonance; lasing mode; low threshold lasing; phase distribution; photonic crystal membrane-reflector vertical-cavity surface-emitting lasers; reflection band; single-layer MR; single-layer membrane reflectors; Buffer layers; Cavity resonators; Indexes; Reflection; Silicon; Vertical cavity surface emitting lasers; Fano resonance; membrane reflectors (MRs); photonic crystals (PCs); semiconductor lasers; silicon nanophotonics; vertical-cavity surface-emitting lasers (VCSELs);
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2012.2227955
