Title :
Microwave plasmatrons for giant integrated circuit processing
Author :
Petrin, Andrei B.
Author_Institution :
Inst. of High Temp., Acad. of Sci., Moscow, Russia
fDate :
2/1/2000 12:00:00 AM
Abstract :
A method for calculating the interaction of a powerful microwave with a plane layer of magnetoactive low-pressure plasma under conditions of electron cyclotron resonance is presented. In this paper, the plasma layer is situated between a plane dielectric layer and a plane metal screen. The calculation model contains the microwave energy balance, particle balance, and electron energy balance. The equation that expressed microwave properties of nonuniform magnetoactive plasma is found. The numerical calculations of the microwave-plasma interaction for a one-dimensional model of the problem are considered. Applications of the results for microwave plasmatrons designed for processing giant integrated circuits are suggested
Keywords :
cyclotron resonance; high-frequency discharges; integrated circuit technology; monolithic integrated circuits; plasma diodes; plasma materials processing; plasma simulation; Ar; Ar microwave discharge; electron cyclotron resonance; electron energy balance; giant integrated circuit processing; magnetoactive low-pressure plasma; microwave energy balance; microwave plasmatrons; microwave properties; microwave-plasma interaction; nonuniform magnetoactive plasma; one-dimensional model; particle balance; plane dielectric layer; plane layer; plane metal screen; plasma materials processing; semiconductor processing; Cyclotrons; Dielectrics; Electrons; Magnetic resonance; Microwave integrated circuits; Microwave theory and techniques; Plasma applications; Plasma displays; Plasma materials processing; Plasma properties;
Journal_Title :
Plasma Science, IEEE Transactions on
