Title :
Novel source-controlled self-verified programming for multilevel EEPROMs
Author :
Lin, Shih-Yun ; Shih-Yun Lin ; Lee, Mou-Lin ; Boe, Chen-Hao ; Yeh, Ching-Pen ; Wu, Po-Hao ; Ni, James ; King, Ya-Chin ; Hsu, Charles Ching-Hsiang
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
6/1/2000 12:00:00 AM
Abstract :
In this work, a new source-controlled self-verified (SCSV) programming method for multilevel storage in EEPROM is discussed. Multilevel storage is a cost-effective approach to improve storage capacity and reduce bit-cost. However, the reduced interlevel margin impacts the reliability and available endurance. The new SCSV programming approach using simultaneous programming and verification can control threshold voltages by different source voltages. Linear relationship between threshold voltage and source voltage is obtained. Furthermore, the endurance of multilevel storage is extended up to 10 6 cycles. The accurate control of threshold voltage improves the reliability of multilevel EEPROM´s. Therefore, the SCSV programming approach is a promising technique for future high-density and low-cost EEPROM applications
Keywords :
EPROM; flash memories; integrated circuit reliability; integrated memory circuits; multivalued logic; bit-cost; endurance; high-density applications; interlevel margin; low-cost applications; multilevel EEPROMs; reliability; source voltages; source-controlled self-verified programming; storage capacity; threshold voltages; Capacitance; Capacitors; Costs; Current supplies; EPROM; Flash memory; Microprogramming; Printers; Threshold voltage; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
