Title :
Approach to electrochemical C-V profiling in semiconductor with sub-Debye-length resolution
Author :
Shashkin, V.I. ; Karetnikova, Irene R. ; Murel, Arcady ; Nefedov, Igor ; Shereshevski, Ilya A.
Author_Institution :
Inst. for Phys. of Microstruct., Acad. of Sci., Nizhny Novgorod, Russia
fDate :
6/1/2000 12:00:00 AM
Abstract :
Three methods for the determination of the detailed structure of dopant distribution in semiconductors, based on the data of electrochemical C-V profiling, are proposed. The methods give the possibility of determining a dopant distribution directly from a semiconductor surface and providing a sub-Debye length resolution. The results of numerical simulation confirm the possibility of determination of semiconductor dopant profile with nanometer depth resolution
Keywords :
doping profiles; electric variables measurement; numerical analysis; semiconductors; dopant distribution; dopant profile determination; electrochemical C-V profiling data; nanometer depth resolution; numerical simulation; semiconductor surface; sub-Debye-length resolution; Capacitance measurement; Capacitance-voltage characteristics; Doping profiles; Electrons; Etching; Integral equations; Numerical simulation; Semiconductor device doping; Semiconductor materials; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
