• DocumentCode
    1337095
  • Title

    Monte Carlo study of sub-0.1 μm Si0.97C0.03/Si MODFET: electron transport and device performance

  • Author

    Dollfus, Philippe ; Galdin, Sylvie ; Hesto, Patrice ; Velázquez, Jesús Enrique

  • Author_Institution
    Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
  • Volume
    47
  • Issue
    6
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    1247
  • Lastpage
    1250
  • Abstract
    We study the electron transport in tensile strained Si1-y Cy pseudomorphically grown on Si(100) substrate, and in n-channel short gate Si1-yCy/Si MODFETs using an ensemble Monte Carlo simulation. The alloy potential in Si1-yCy is used as a parameter, ranging from 0 to 2 eV. When the alloy scattering reduces drastically the intrinsic transport properties in Si1-yCy alloys, the nonstationary transport occurring in ultrashort gate MODFETs decreases the influence of scattering processes. The device performance can then fully benefit from the strain-induced reduction of effective mass
  • Keywords
    Monte Carlo methods; elemental semiconductors; high electron mobility transistors; hot carriers; semiconductor device models; semiconductor materials; silicon; silicon compounds; 0 to 2 eV; MODFET; Monte Carlo study; Si0.97C0.03-Si; alloy potential; alloy scattering; electron transport; intrinsic transport properties; n-channel short gate devices; pseudomorphic growth; scattering processes; strain-induced reduction; tensile strained material; Effective mass; Electrons; Germanium silicon alloys; HEMTs; MODFETs; Monte Carlo methods; Scattering; Silicon alloys; Silicon germanium; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.842969
  • Filename
    842969
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1337095