Modeling of SILC based on electron and hole tunneling. II. Steady-state

Author

Ielmini, Daniele ; Spinelli, Alessandro S. ; Rigamonti, Matteo A. ; Lacaita, Andrea L.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

47

Issue

6

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

1266

Lastpage

1272

Abstract

For pt. I see ibid., vol. 47, no. 6 (June 2000). A numerical model for the stationary stress-induced leakage current (SILC) is presented, accounting for both electron and hole tunneling. Detailed comparisons against experimental results on both n- and p-channel devices highlight that the steady-state SILC is due to positively charged centers, with an energy level located in correspondence of the silicon bandgap. Electron-hole recombination at these sites dominates normal trap-assisted tunneling at low oxide fields, and successfully accounts for recently observed hole steady-state leakage. The contribution from neutral traps seems instead marginal. Based on this new picture, the impact of the recombination process on the leakage properties of ultrathin gate is also discussed

Keywords

MOSFET; electron-hole recombination; internal stresses; leakage currents; semiconductor device reliability; tunnelling; SILC; Si; bandgap; electron tunneling; electron-hole recombination; energy level; hole steady-state leakage; hole tunneling; leakage properties; n-channel devices; p-channel devices; positively charged centers; stationary stress-induced leakage current; ultrathin gate; Charge carrier processes; Electron traps; Energy states; Leakage current; Numerical models; Photonic band gap; Silicon; Spontaneous emission; Steady-state; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.842972

Filename

842972