Title :
Simplified method to investigate quantum mechanical effects in MOS structure inversion layer
Author :
Ma, Yutao ; Liu, Litian ; Yu, Zhiping ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fDate :
6/1/2000 12:00:00 AM
Abstract :
A simplified method to calculate the band bending and subband energies is employed to investigate quantum mechanical effects (QMEs) in MOS structure inversion layer. The subband structure and the two-dimensional (2-D) density-of-states in semi-classical and quantum mechanical cases are then calculated. The well-known band-gap widening model is analyzed through a density-of-states point of view and a new scheme to analyse and model QMEs in an MOS inversion layer is proposed
Keywords :
MIS structures; band structure; electronic density of states; inversion layers; quantum theory; 2D density-of-states; MOS structure; band bending; band-gap widening model; inversion layer; quantum mechanical effects; subband energies; Electrons; Energy states; Laboratories; Microelectronics; Photonic band gap; Poisson equations; Predictive models; Quantum mechanics; Statistics; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
